Oxidation mechanism involved in thin tin films

Oxidation mechanism involved in thin tin films

Tin in thin film form reaches its highest oxidation state SnO sub 2 either through direct or indirect phase transformation. The direct or indirect transformation depends on whether SnO is in the alpha or beta phase, respectively. When SnO sub 2 was reactively deposited, SnO sub 2 films formed throug...

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Veröffentlicht in:Indian journal of engineering and materials sciences 1996-06, Vol.3 (3), p.109-113
Hauptverfasser: ABRAHAM, J. T, THOMAS, P. V, GOPCHANDRAN, K. G, JOSEPH, B, VAIDYAN, V. K
Format: Artikel
Sprache:eng
Schlagworte:
Applied sciences
Corrosion
Corrosion mechanisms
Exact sciences and technology
Metals. Metallurgy
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Zusammenfassung:Tin in thin film form reaches its highest oxidation state SnO sub 2 either through direct or indirect phase transformation. The direct or indirect transformation depends on whether SnO is in the alpha or beta phase, respectively. When SnO sub 2 was reactively deposited, SnO sub 2 films formed through a direct transformation exhibited high conductivity and optical transmission than those formed through an indirect phase transformation. It has been observed that a direct transformation helps to reduce the substrate temperature required for the reactive deposition of SnO sub 2 .
ISSN:0971-4588