Monolithic serial InGaAs-GaAs-AlGaAs laser diode arrays

Top-contact monolithic serially-biased InGaAs-GaAs-AlGaAs (/spl lambda//spl sim/0.93 μm) broad area strained-layer quantum well laser arrays have been fabricated on a semi-insulating GaAs substrate. The laser array consists of four individual laser diodes and operates up to 2.8 W at 3.6 A (supply li...

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Veröffentlicht in:	IEEE photonics technology letters 1994-09, Vol.6 (9), p.1059-1061
Hauptverfasser:	Han, H., Holehouse, N., Forbes, D.V., Coleman, J.J.
Format:	Artikel
Sprache:	eng
Schlagworte:	Chemical lasers Diode lasers Exact sciences and technology Fundamental areas of phenomenology (including applications) Gallium arsenide Laser radar Lasers Optical arrays Optics Physics Power lasers Pump lasers Quantum well lasers Semiconductor laser arrays Semiconductor lasers laser diodes Substrates
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