Monolithic serial InGaAs-GaAs-AlGaAs laser diode arrays

Monolithic serial InGaAs-GaAs-AlGaAs laser diode arrays

Top-contact monolithic serially-biased InGaAs-GaAs-AlGaAs (/spl lambda//spl sim/0.93 μm) broad area strained-layer quantum well laser arrays have been fabricated on a semi-insulating GaAs substrate. The laser array consists of four individual laser diodes and operates up to 2.8 W at 3.6 A (supply li...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:IEEE photonics technology letters 1994-09, Vol.6 (9), p.1059-1061
Hauptverfasser: Han, H., Holehouse, N., Forbes, D.V., Coleman, J.J.
Format: Artikel
Sprache:eng
Schlagworte:
Chemical lasers
Diode lasers
Exact sciences and technology
Fundamental areas of phenomenology (including applications)
Gallium arsenide
Laser radar
Lasers
Optical arrays
Optics
Physics
Power lasers
Pump lasers
Quantum well lasers
Semiconductor laser arrays
Semiconductor lasers
laser diodes
Substrates
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:Top-contact monolithic serially-biased InGaAs-GaAs-AlGaAs (/spl lambda//spl sim/0.93 μm) broad area strained-layer quantum well laser arrays have been fabricated on a semi-insulating GaAs substrate. The laser array consists of four individual laser diodes and operates up to 2.8 W at 3.6 A (supply limited) per uncoated facet under pulsed conditions (15 kHz, 2 μs). The threshold current is /spl sim/0.5 A, and the peak slope efficiency and the peak electrical-to-optical conversion efficiency of an individual laser element are /spl sim/0.53 W/A and 14%, respectively. The near-field intensity distribution is shown to be broad enough to fill the entire active region under the p-metal stripe (125 μm) of the individual laser diodes at high current levels.
ISSN:1041-1135
1941-0174
DOI:10.1109/68.324668