Electronic passivation of silicon surfaces by halogens

The electronic passivation of Si surface by iodine termination is reported. The resulting surface recombination velocity on Si(100) is less than 1 cm/s, which is better than that obtained in concentrated HF. A surface recombination velocity of 20 cm/s using bromine is achieved. A simple model for th...

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Veröffentlicht in:Journal of electronic materials 1994-05, Vol.23 (5), p.487-491
Hauptverfasser: M'SAAD, H, MICHEL, J, LAPPE, J. J, KIMERLING, L. C
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container_end_page 491
container_issue 5
container_start_page 487
container_title Journal of electronic materials
container_volume 23
creator M'SAAD, H
MICHEL, J
LAPPE, J. J
KIMERLING, L. C
description The electronic passivation of Si surface by iodine termination is reported. The resulting surface recombination velocity on Si(100) is less than 1 cm/s, which is better than that obtained in concentrated HF. A surface recombination velocity of 20 cm/s using bromine is achieved. A simple model for these phenomena of a surface coverage of Si-X, where X is a monovalently bonded halogen atom, is presented.
doi_str_mv 10.1007/bf02671234
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subjects Condensed matter: electronic structure, electrical, magnetic, and optical properties
Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures
Exact sciences and technology
Physics
Surface and interface electron states
Surface states, band structure, electron density of states
title Electronic passivation of silicon surfaces by halogens
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