Electronic passivation of silicon surfaces by halogens

The electronic passivation of Si surface by iodine termination is reported. The resulting surface recombination velocity on Si(100) is less than 1 cm/s, which is better than that obtained in concentrated HF. A surface recombination velocity of 20 cm/s using bromine is achieved. A simple model for th...

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Veröffentlicht in:	Journal of electronic materials 1994-05, Vol.23 (5), p.487-491
Hauptverfasser:	M'SAAD, H, MICHEL, J, LAPPE, J. J, KIMERLING, L. C
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed matter: electronic structure, electrical, magnetic, and optical properties Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures Exact sciences and technology Physics Surface and interface electron states Surface states, band structure, electron density of states
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Zusammenfassung:	The electronic passivation of Si surface by iodine termination is reported. The resulting surface recombination velocity on Si(100) is less than 1 cm/s, which is better than that obtained in concentrated HF. A surface recombination velocity of 20 cm/s using bromine is achieved. A simple model for these phenomena of a surface coverage of Si-X, where X is a monovalently bonded halogen atom, is presented.
ISSN:	0361-5235 1543-186X
DOI:	10.1007/bf02671234