Very narrow linewidth asymmetric cladding InGaAs-GaAs ridge waveguide distributed Bragg reflector lasers

Very narrow linewidth asymmetric cladding InGaAs-GaAs ridge waveguide distributed Bragg reflector lasers

Asymmetric cladding InGaAs-GaAs ridge waveguide distributed Bragg reflector (RW-DBR) lasers are demonstrated with a spectral linewidth as low as 39 kHz for an output power of 24 mW. The fabrication requires only a single standard epitaxial growth of a laser structure while the use of a thin top clad...

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Veröffentlicht in:IEEE photonics technology letters 1996-04, Vol.8 (4), p.476-478
Hauptverfasser: Smith, G.M., Hughes, J.S., Lammert, R.M., Osowski, M.L., Papen, G.C., Verdeyen, J.T., Coleman, J.J.
Format: Artikel
Sprache:eng
Schlagworte:
Chemical lasers
Distributed Bragg reflectors
Etching
Fiber lasers
Gallium arsenide
Laser modes
Laser tuning
Power lasers
Semiconductor lasers
Waveguide lasers
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Zusammenfassung:Asymmetric cladding InGaAs-GaAs ridge waveguide distributed Bragg reflector (RW-DBR) lasers are demonstrated with a spectral linewidth as low as 39 kHz for an output power of 24 mW. The fabrication requires only a single standard epitaxial growth of a laser structure while the use of a thin top cladding layer allows for a shallow reactive ion etch of the distributed Bragg reflector. These RW-DBR lasers have a threshold current of 12.4 mA, a slope of 0.3 W/A, and over 40 dB side-mode suppression at a wavelength of 1010 nm.
ISSN:1041-1135
1941-0174
DOI:10.1109/68.491088