Electrodeposition and characterization of GaAs polycrystalline thin films

The preparation of polycrystalline GaAs films by using electrodeposition technology is described. Using scanning electron microscopy, x-ray diffraction, spectrophotometry, and a CG-1 HF C-V tester, the characteristics of the films prepared have been measured. The results show that the stoichiometry of the film approximates to GaAs. On the basis of Mott–Schottky plot, the position of energy band edges of film is calculated. Finally, the photoelectrochemical characteristic of the electrodeposited film/electrolyte junction is measured.