Effect of oxidation ambient on the dielectric breakdown characteristics of thermal oxide films of silicon

This study investigated the dielectric breakdown characteristics of thermal oxide films grown by dry and wet oxidation. Oxide films grown by wet oxidation have lower B-mode failure rates and higher B-mode breakdown fields. On the other hand, the reliability of C mode of oxide films does not differ consistently between films grown by dry and wet oxidation. These results indicate that as-grown defect causing B-mode failure may shrink or be reduced during wet oxidation.