Efficient polarization insensitive electroabsorption modulator using strained InGaAsP-based quantum wells

Polarization insensitivity is presently an important challenge for electro-optical components for optical-fiber telecommunications. We report on a polarization insensitive electroabsorption modulator based on strained InGaAsP/InGaAsP multiple quantum wells and having remarkably high static performances, as illustrated by a record figure of merit of 4.3 (dB/100 μm)/(V/μm). We also discuss in detail the theoretical aspects of electroabsorption polarization independence for quantum well modulators.