Direct observation of silicide growth at FeSi interface during pulsed laser deposition

Using X-ray photoelectron spectroscopy, the layer-by-layer growth of iron silicides has been studied in situ during pulsed laser deposition. Successive layers of FeSi 2, FeSi and metallic Fe were identified in the case of Fe deposition on Si(100) substrate, while for Si deposition n Fe substrate pra...

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Veröffentlicht in:Thin solid films 1994-07, Vol.247 (1), p.39-43
Hauptverfasser: Chubunova, E.V., Khabelashvili, I.D., Lebedinskii, Yu.Yu, Nevolin, V.N., Zenkevich, A.
Format: Artikel
Sprache:eng
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Zusammenfassung:Using X-ray photoelectron spectroscopy, the layer-by-layer growth of iron silicides has been studied in situ during pulsed laser deposition. Successive layers of FeSi 2, FeSi and metallic Fe were identified in the case of Fe deposition on Si(100) substrate, while for Si deposition n Fe substrate practically no silicide was found to grow at the interface. The nature of the FeSi interaction at the interface is supposed to depend on the type and energy of the depositing particles.
ISSN:0040-6090
1879-2731
DOI:10.1016/0040-6090(94)90473-1