Effect of thermal annealing on GaN nucleation layers deposited on (0001)sapphire by metallorganic chemical vapor deposition

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Veröffentlicht in:	Journal of applied physics 1994-01, Vol.75 (10), p.5367-5371
Hauptverfasser:	Wickenden, A Estes, Wickenden, D K, Kistenmacher, T J
Format:	Artikel
Sprache:	eng
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title	Effect of thermal annealing on GaN nucleation layers deposited on (0001)sapphire by metallorganic chemical vapor deposition
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