Effect of nitridation on the electrical properties of W:Ti resistors

Paper describes fabrication and evaluation of rf sputtered W:Ti thin-film resistors in Ar and Ar/N sub 2 atms. By tightly controlling nitrogen content, resistors with thermal coeffs. of resistivity ranging from positive to negative values can be designed.

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Bibliographische Detailangaben
Veröffentlicht in:	Journal of electronic materials 1994-10, Vol.23 (10), p.1067-1070
Hauptverfasser:	LISICKA-SKRZEK, E, COYNE, W, MILLAR, G, BEROLO, O
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Electronic equipment and fabrication. Passive components, printed wiring boards, connectics Electronics Exact sciences and technology
Online-Zugang:	Volltext
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Beschreibung
Zusammenfassung:	Paper describes fabrication and evaluation of rf sputtered W:Ti thin-film resistors in Ar and Ar/N sub 2 atms. By tightly controlling nitrogen content, resistors with thermal coeffs. of resistivity ranging from positive to negative values can be designed.
ISSN:	0361-5235 1543-186X
DOI:	10.1007/BF02650377