Effect of copper ions in the slurry on the chemical-mechanical polish rate of titanium
Titanium is being investigated as the adhesion promoter and diffusion barrier between silicon dioxide and copper in a Cu metallization scheme. Chemical-mechanical polishing (CMP) is being used to define the inlaid Cu interconnections. An investigation into the CMP of Ti has revealed an interaction b...
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| Veröffentlicht in: | Journal of the Electrochemical Society 1994-12, Vol.141 (12), p.3512-3516 |
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| container_end_page | 3516 |
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| container_issue | 12 |
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| container_title | Journal of the Electrochemical Society |
| container_volume | 141 |
| creator | STEIGERWALD, J. M MURARKA, S. P GUTMANN, R. J DUQUETTE, D. J |
| description | Titanium is being investigated as the adhesion promoter and diffusion barrier between silicon dioxide and copper in a Cu metallization scheme. Chemical-mechanical polishing (CMP) is being used to define the inlaid Cu interconnections. An investigation into the CMP of Ti has revealed an interaction between the presence of Cu ions in the polish slurry and the polish rate of Ti. The polish rate of Ti increases dramatically when Cu ions are present in the slurry from the previous Cu polish step. In this paper, we present and discuss the results of these investigations. |
| doi_str_mv | 10.1149/1.2059362 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_26373207</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>26373207</sourcerecordid><originalsourceid>FETCH-LOGICAL-c353t-a2a6a6c0076ff613253d2cd00492c148b51145dc63645c05cea524a3903ae2773</originalsourceid><addsrcrecordid>eNo9kE9LxDAQxYMouK4e_AY5iOChayaTpNujLOsfWPCiXkvMJjTSNjVJD_vtbdnF08xjfvPgPUJuga0ARPUIK85khYqfkQVUQhYlAJyTBWOAhVASLslVSj-ThLUoF-Rr65w1mQZHTRgGG6kPfaK-p7mxNLVjjAcajso0tvNGt0VnTaP7eaVDaH1qaNTZzh7Z5-kwdtfkwuk22ZvTXJLP5-3H5rXYvb-8bZ52hUGJudBcK60MY6VyTgFyiXtu9oyJihsQ6285hZJ7o1AJaZg0VksuNFYMteVliUtyf_QdYvgdbcp155Oxbat7G8ZUc4UlcjaDD0fQxJBStK4eou90PNTA6rm5GupTcxN7dzLVacroou6NT_8PiGteKYF_T2ZrsA</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>26373207</pqid></control><display><type>article</type><title>Effect of copper ions in the slurry on the chemical-mechanical polish rate of titanium</title><source>IOP Publishing Journals</source><creator>STEIGERWALD, J. M ; MURARKA, S. P ; GUTMANN, R. J ; DUQUETTE, D. J</creator><creatorcontrib>STEIGERWALD, J. M ; MURARKA, S. P ; GUTMANN, R. J ; DUQUETTE, D. J</creatorcontrib><description>Titanium is being investigated as the adhesion promoter and diffusion barrier between silicon dioxide and copper in a Cu metallization scheme. Chemical-mechanical polishing (CMP) is being used to define the inlaid Cu interconnections. An investigation into the CMP of Ti has revealed an interaction between the presence of Cu ions in the polish slurry and the polish rate of Ti. The polish rate of Ti increases dramatically when Cu ions are present in the slurry from the previous Cu polish step. In this paper, we present and discuss the results of these investigations.</description><identifier>ISSN: 0013-4651</identifier><identifier>EISSN: 1945-7111</identifier><identifier>DOI: 10.1149/1.2059362</identifier><identifier>CODEN: JESOAN</identifier><language>eng</language><publisher>Pennington, NJ: Electrochemical Society</publisher><subject>Applied sciences ; Exact sciences and technology ; Metals. Metallurgy ; Polishing. Blast cleaning ; Production techniques ; Surface treatment</subject><ispartof>Journal of the Electrochemical Society, 1994-12, Vol.141 (12), p.3512-3516</ispartof><rights>1995 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c353t-a2a6a6c0076ff613253d2cd00492c148b51145dc63645c05cea524a3903ae2773</citedby></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=3382964$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>STEIGERWALD, J. M</creatorcontrib><creatorcontrib>MURARKA, S. P</creatorcontrib><creatorcontrib>GUTMANN, R. J</creatorcontrib><creatorcontrib>DUQUETTE, D. J</creatorcontrib><title>Effect of copper ions in the slurry on the chemical-mechanical polish rate of titanium</title><title>Journal of the Electrochemical Society</title><description>Titanium is being investigated as the adhesion promoter and diffusion barrier between silicon dioxide and copper in a Cu metallization scheme. Chemical-mechanical polishing (CMP) is being used to define the inlaid Cu interconnections. An investigation into the CMP of Ti has revealed an interaction between the presence of Cu ions in the polish slurry and the polish rate of Ti. The polish rate of Ti increases dramatically when Cu ions are present in the slurry from the previous Cu polish step. In this paper, we present and discuss the results of these investigations.</description><subject>Applied sciences</subject><subject>Exact sciences and technology</subject><subject>Metals. Metallurgy</subject><subject>Polishing. Blast cleaning</subject><subject>Production techniques</subject><subject>Surface treatment</subject><issn>0013-4651</issn><issn>1945-7111</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1994</creationdate><recordtype>article</recordtype><recordid>eNo9kE9LxDAQxYMouK4e_AY5iOChayaTpNujLOsfWPCiXkvMJjTSNjVJD_vtbdnF08xjfvPgPUJuga0ARPUIK85khYqfkQVUQhYlAJyTBWOAhVASLslVSj-ThLUoF-Rr65w1mQZHTRgGG6kPfaK-p7mxNLVjjAcajso0tvNGt0VnTaP7eaVDaH1qaNTZzh7Z5-kwdtfkwuk22ZvTXJLP5-3H5rXYvb-8bZ52hUGJudBcK60MY6VyTgFyiXtu9oyJihsQ6285hZJ7o1AJaZg0VksuNFYMteVliUtyf_QdYvgdbcp155Oxbat7G8ZUc4UlcjaDD0fQxJBStK4eou90PNTA6rm5GupTcxN7dzLVacroou6NT_8PiGteKYF_T2ZrsA</recordid><startdate>19941201</startdate><enddate>19941201</enddate><creator>STEIGERWALD, J. M</creator><creator>MURARKA, S. P</creator><creator>GUTMANN, R. J</creator><creator>DUQUETTE, D. J</creator><general>Electrochemical Society</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope></search><sort><creationdate>19941201</creationdate><title>Effect of copper ions in the slurry on the chemical-mechanical polish rate of titanium</title><author>STEIGERWALD, J. M ; MURARKA, S. P ; GUTMANN, R. J ; DUQUETTE, D. J</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c353t-a2a6a6c0076ff613253d2cd00492c148b51145dc63645c05cea524a3903ae2773</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1994</creationdate><topic>Applied sciences</topic><topic>Exact sciences and technology</topic><topic>Metals. Metallurgy</topic><topic>Polishing. Blast cleaning</topic><topic>Production techniques</topic><topic>Surface treatment</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>STEIGERWALD, J. M</creatorcontrib><creatorcontrib>MURARKA, S. P</creatorcontrib><creatorcontrib>GUTMANN, R. J</creatorcontrib><creatorcontrib>DUQUETTE, D. J</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><jtitle>Journal of the Electrochemical Society</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>STEIGERWALD, J. M</au><au>MURARKA, S. P</au><au>GUTMANN, R. J</au><au>DUQUETTE, D. J</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Effect of copper ions in the slurry on the chemical-mechanical polish rate of titanium</atitle><jtitle>Journal of the Electrochemical Society</jtitle><date>1994-12-01</date><risdate>1994</risdate><volume>141</volume><issue>12</issue><spage>3512</spage><epage>3516</epage><pages>3512-3516</pages><issn>0013-4651</issn><eissn>1945-7111</eissn><coden>JESOAN</coden><abstract>Titanium is being investigated as the adhesion promoter and diffusion barrier between silicon dioxide and copper in a Cu metallization scheme. Chemical-mechanical polishing (CMP) is being used to define the inlaid Cu interconnections. An investigation into the CMP of Ti has revealed an interaction between the presence of Cu ions in the polish slurry and the polish rate of Ti. The polish rate of Ti increases dramatically when Cu ions are present in the slurry from the previous Cu polish step. In this paper, we present and discuss the results of these investigations.</abstract><cop>Pennington, NJ</cop><pub>Electrochemical Society</pub><doi>10.1149/1.2059362</doi><tpages>5</tpages></addata></record> |
| fulltext | fulltext |
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| ispartof | Journal of the Electrochemical Society, 1994-12, Vol.141 (12), p.3512-3516 |
| issn | 0013-4651 1945-7111 |
| language | eng |
| recordid | cdi_proquest_miscellaneous_26373207 |
| source | IOP Publishing Journals |
| subjects | Applied sciences Exact sciences and technology Metals. Metallurgy Polishing. Blast cleaning Production techniques Surface treatment |
| title | Effect of copper ions in the slurry on the chemical-mechanical polish rate of titanium |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-04T20%3A55%3A54IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Effect%20of%20copper%20ions%20in%20the%20slurry%20on%20the%20chemical-mechanical%20polish%20rate%20of%20titanium&rft.jtitle=Journal%20of%20the%20Electrochemical%20Society&rft.au=STEIGERWALD,%20J.%20M&rft.date=1994-12-01&rft.volume=141&rft.issue=12&rft.spage=3512&rft.epage=3516&rft.pages=3512-3516&rft.issn=0013-4651&rft.eissn=1945-7111&rft.coden=JESOAN&rft_id=info:doi/10.1149/1.2059362&rft_dat=%3Cproquest_cross%3E26373207%3C/proquest_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=26373207&rft_id=info:pmid/&rfr_iscdi=true |