Effect of copper ions in the slurry on the chemical-mechanical polish rate of titanium

Effect of copper ions in the slurry on the chemical-mechanical polish rate of titanium

Titanium is being investigated as the adhesion promoter and diffusion barrier between silicon dioxide and copper in a Cu metallization scheme. Chemical-mechanical polishing (CMP) is being used to define the inlaid Cu interconnections. An investigation into the CMP of Ti has revealed an interaction b...

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Veröffentlicht in:Journal of the Electrochemical Society 1994-12, Vol.141 (12), p.3512-3516
Hauptverfasser: STEIGERWALD, J. M, MURARKA, S. P, GUTMANN, R. J, DUQUETTE, D. J
Format: Artikel
Sprache:eng
Schlagworte:
Applied sciences
Exact sciences and technology
Metals. Metallurgy
Polishing. Blast cleaning
Production techniques
Surface treatment
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Zusammenfassung:Titanium is being investigated as the adhesion promoter and diffusion barrier between silicon dioxide and copper in a Cu metallization scheme. Chemical-mechanical polishing (CMP) is being used to define the inlaid Cu interconnections. An investigation into the CMP of Ti has revealed an interaction between the presence of Cu ions in the polish slurry and the polish rate of Ti. The polish rate of Ti increases dramatically when Cu ions are present in the slurry from the previous Cu polish step. In this paper, we present and discuss the results of these investigations.
ISSN:0013-4651
1945-7111
DOI:10.1149/1.2059362