A 5.8 GHz low noise amplifier for wireless LAN applications in silicon bipolar technology

A 5.8 GHz low noise amplifier for wireless LAN applications in silicon bipolar technology

A monolithic integrated low-noise amplifier for operation in the 5.8-GHz band is described. Two different versions have been implemented where the biasing was adapted to allow operation over a different range of supply voltage. At 5-V, the amplifiers gain is about 17-dB, with a noise figure of 4.2-d...

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Veröffentlicht in:Analog integrated circuits and signal processing 2001-04, Vol.27 (1-2), p.127-134
Hauptverfasser: Schuppener, G, Mokhtari, M, Kerzar, B
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Mokhtari, M
Kerzar, B
description A monolithic integrated low-noise amplifier for operation in the 5.8-GHz band is described. Two different versions have been implemented where the biasing was adapted to allow operation over a different range of supply voltage. At 5-V, the amplifiers gain is about 17-dB, with a noise figure of 4.2-dB and 1-dB compression point at -15-dBm input power. The circuits have been designed utilizing a 0.6-micron silicon bipolar production technology, featuring npn transistors with f sub(T) and f sub(max) of about 20-GHz.
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title A 5.8 GHz low noise amplifier for wireless LAN applications in silicon bipolar technology
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