A 5.8 GHz low noise amplifier for wireless LAN applications in silicon bipolar technology
A monolithic integrated low-noise amplifier for operation in the 5.8-GHz band is described. Two different versions have been implemented where the biasing was adapted to allow operation over a different range of supply voltage. At 5-V, the amplifiers gain is about 17-dB, with a noise figure of 4.2-d...
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| Veröffentlicht in: | Analog integrated circuits and signal processing 2001-04, Vol.27 (1-2), p.127-134 |
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| Hauptverfasser: | , , |
| Format: | Artikel |
| Sprache: | eng |
| Online-Zugang: | Volltext |
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| Zusammenfassung: | A monolithic integrated low-noise amplifier for operation in the 5.8-GHz band is described. Two different versions have been implemented where the biasing was adapted to allow operation over a different range of supply voltage. At 5-V, the amplifiers gain is about 17-dB, with a noise figure of 4.2-dB and 1-dB compression point at -15-dBm input power. The circuits have been designed utilizing a 0.6-micron silicon bipolar production technology, featuring npn transistors with f sub(T) and f sub(max) of about 20-GHz. |
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| ISSN: | 0925-1030 |