Characterization of nanocrystallites in porous p-type 6H-SiC

We report the formation of porous p-type 6H-SiC. The existence of uniformly dispersed pores was confirmed by transmission electron microscopy, with interpore spacings in the range of 1-10 nm. The porous film as a whole is a single crystal. Luminescence peaks above the normal band gap of 6H-SiC have...

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Veröffentlicht in:	Journal of applied physics 1994-10, Vol.76 (7), p.4045-4049
Hauptverfasser:	Shor, J. S., Bemis, L., Kurtz, A. D., Grimberg, I., Weiss, B. Z., Macmillian, M. F., Choyke, W. J.
Format:	Artikel
Sprache:	eng
Schlagworte:	Solid-State Physics
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Zusammenfassung:	We report the formation of porous p-type 6H-SiC. The existence of uniformly dispersed pores was confirmed by transmission electron microscopy, with interpore spacings in the range of 1-10 nm. The porous film as a whole is a single crystal. Luminescence peaks above the normal band gap of 6H-SiC have been observed in the porous layer, but were not distinguished in the bulk SiC substrate. Quantum confinement is discussed as a possible mechanism for the luminescence effects.
ISSN:	0021-8979 1089-7550
DOI:	10.1063/1.357352