Tunable morphology and highly stable α-CsPbI3 Nano-bricks for photoelectric devices

α-CsPbI3 nanostructures were fabricated by catalyst-free high-pressure pulsed laser deposition. The α-CsPbI3 nanostructures grown on Si (100) substrates exhibits excellent stability without packaging in ambient air. The size of CsPbI3 nanostructures can be controlled from micron to nanometer by adjusting the target distance. Photodetectors based on CsPbI3/n-Si heterojunction exhibited highly stable and reproducible characteristics. [Display omitted] CsPbI3 with suitable bandgap (∼1.73 eV) and excellent photoelectric performance are considered promising candidates for new-generation photovoltaic and photoelectric devices. However, the phase instability of CsPbI3 hinders its application in photoelectric devices. In this study, cubic phase CsPbI3 nano-bricks with high stability are prepared on Si substrates by catalyst-freehigh-pressure pulsedlaser deposition.Theeffectsofthetarget-substrate distance on the morphological, structural and photoluminescence propertiesofCsPbI3 nano-bricks are investigated. CsPbI3 nano-bricks exhibits excellent long-term stability for 12 months, which can be attributed to the smaller lattice mismatch between Si (100) and CsPbI3 (100). Furthermore, the photodetector based on CsPbI3/n-Si heterojunction exhibited obvious spectral response in the red band of 710 nm. This work provides a novel idea for the preparation of photoelectric devices with cubic CsPbI3.