The wettability of silicon carbide by liquid aluminium : the effect of free silicon in the carbide and of magnesium, silicon and copper alloy additions to the aluminium

Results from sessile drop method are reported for effects on wetting angle of free Si in SiC substrate and of alloy additions of Si, Cu, or Mg to Al drop at 700-960 degrees C or 1040 degrees in a Ti-gettered vacuum (10 sup - sup 4 /10 sup - sup 5 torr). Wetting angle is reduced by a factor as large...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Journal of materials science 1993-01, Vol.28 (10), p.2654-2658
Hauptverfasser: DO-SUCK HAN, JONES, H, ATKINSON, H. V
Format: Artikel
Sprache:eng
Schlagworte:
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:Results from sessile drop method are reported for effects on wetting angle of free Si in SiC substrate and of alloy additions of Si, Cu, or Mg to Al drop at 700-960 degrees C or 1040 degrees in a Ti-gettered vacuum (10 sup - sup 4 /10 sup - sup 5 torr). Wetting angle is reduced by a factor as large as 2.8 for pure Al on reaction-bonded, as compared with sintered, SiC. 49 refs.
ISSN:0022-2461
1573-4803
DOI:10.1007/BF00356199