$X-ray diffraction characterization of LPE HgCdTe heterojunction photodiode material$

X-ray diffraction characterization of LPE HgCdTe heterojunction photodiode material

Using asymmetric 246 reflection, small composition differences (0.03) can be resolved. High-resolution XRD is a nondestructive, relatively rapid technique for screeening as-grown heterojunction material for carrier collection barriers.

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Bibliographische Detailangaben
Veröffentlicht in:	Journal of electronic materials 1993-08, Vol.22 (8), p.959-966
Hauptverfasser:	TOBIN, S. P, KRUEGER, E. E, PULTZ, G. N, KESTIGIAN, M, WONG, K.-K, NORTON, P. W
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed matter: structure, mechanical and thermal properties Exact sciences and technology Low-dimensional structures (superlattices, quantum well structures, multilayers): structure, and nonelectronic properties Physics Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties)
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Beschreibung
Zusammenfassung:	Using asymmetric 246 reflection, small composition differences (0.03) can be resolved. High-resolution XRD is a nondestructive, relatively rapid technique for screeening as-grown heterojunction material for carrier collection barriers.
ISSN:	0361-5235 1543-186X
DOI:	10.1007/BF02817510