Unidirectional Elimination of Hydrogen by a Giant Local Field Saves First- and Last-Mile Performances of Semiconductor Devices

Hydrogen, the smallest element, easily forms bonds to host/dopant atoms in semiconductors, which strongly passivates the original electronic characteristics and deteriorates the final reliability. Here, we demonstrate a concept of unidirectional elimination of hydrogen from semiconductor wafers as w...

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Veröffentlicht in:The journal of physical chemistry letters 2022-03, Vol.13 (9), p.2084-2093
Hauptverfasser: Lu, Shiqiang, Zhong, Zhibai, Guo, Bin, Chen, Xiaohong, Liu, Guozhen, Lin, Zefeng, Chen, Han, Huang, Shengrong, Liang, Xudong, Zheng, Yuanzhi, Huang, Xiaohui, Wang, Mingxing, Xu, Fujun, Zhang, Yanhua, Zhang, Canming, Wang, Xudong, Zhou, Yinghui, Li, Shuping, Lee, June Key, Cai, Duanjun, Kang, Junyong
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Sprache:eng
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Zusammenfassung:Hydrogen, the smallest element, easily forms bonds to host/dopant atoms in semiconductors, which strongly passivates the original electronic characteristics and deteriorates the final reliability. Here, we demonstrate a concept of unidirectional elimination of hydrogen from semiconductor wafers as well as electronic chips through a giant local electric field induced by compact chloridions. We reveal an interactive behavior of chloridions, which can rapidly approach and take hydrogen atoms away from the device surface. A universal and simple technique based on a solution-mediated three-electrode system achieves efficient hydrogen elimination from various semiconductor wafers (p-GaN, p-AlGaN, SiC, and AlInP) and also complete light emitting diodes (LEDs). The p-type conductivity and light output efficiency of H-eliminated UVC LEDs have been significantly enhanced, and the lifetime is almost doubled. Moreover, we confirm that under a one-second irradiation of UVC LEDs, bacteria and COVID-19 coronavirus can be completely killed (>99.93%). This technology will accelerate the further development of the semiconductor-based electronic industry.
ISSN:1948-7185
1948-7185
DOI:10.1021/acs.jpclett.1c04111