Well width dependence of the exciton lifetime in narrow GaAs/GaAlAs quantum wells

We have studied the radiative excitonic lifetime as a function of the well width in GaAs/GaAlAs quantum wells. An increasing lifetime with decreasing well width has been observed in very narrow and high quality GaAs/GaAlAs quantum wells, and attributed to the reduced overlap of the electron and hole...

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Veröffentlicht in:	Solid state communications 1993-09, Vol.87 (9), p.797-800
Hauptverfasser:	Xu, Z.Y., Jin, S.R., Luo, C.P., Xu, J.Z.
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed matter: electronic structure, electrical, magnetic, and optical properties Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures Exact sciences and technology Physics Surface and interface electron states
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Zusammenfassung:	We have studied the radiative excitonic lifetime as a function of the well width in GaAs/GaAlAs quantum wells. An increasing lifetime with decreasing well width has been observed in very narrow and high quality GaAs/GaAlAs quantum wells, and attributed to the reduced overlap of the electron and hole wave functions and the increase of the exciton effective volume. This is the first observation of its kind in the conventional GaAs/GaAlAs quantum wells.
ISSN:	0038-1098 1879-2766
DOI:	10.1016/0038-1098(93)90416-K