The study of lead sulfide films The behaviour at low-temperature thermal treatment
The influence of annealing temperature on the sheet electrical resistance in the dark ( R□d) and the photosensitivity ( S) of the chemically deposited PbS thin films (thickness, 0.12–0.20 μm) was studied. By thermal treatment in air at 75–150°C, the parameters were increased, but after keeping the s...
Gespeichert in:
Veröffentlicht in: | Thin solid films 1996-09, Vol.283 (1), p.119-123 |
---|---|
Hauptverfasser: | , , , , , |
Format: | Artikel |
Sprache: | eng |
Schlagworte: | |
Online-Zugang: | Volltext |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
Zusammenfassung: | The influence of annealing temperature on the sheet electrical resistance in the dark (
R□d) and the photosensitivity (
S) of the chemically deposited PbS thin films (thickness, 0.12–0.20 μm) was studied. By thermal treatment in air at 75–150°C, the parameters were increased, but after keeping the samples on anhydrous CaCl
2 or P
2O
5, they decreased. The process is reversible and can be interpreted as a sorption/ desorption of H
2O vapours. The concentration of SO
4
2− ions in the annealed films as determined by spectrophotometric titration, was 76–200 μg cm
−2. By X-ray diffraction analysis, an increase of the average crystallite size and a decrease of the microstrains were observed. |
---|---|
ISSN: | 0040-6090 1879-2731 |
DOI: | 10.1016/0040-6090(95)08242-5 |