Optically pumped stimulated emission in ZnS/ZnCdS multiple quantum-wells, MBE-grown on GaP

Optically pumped stimulated emission is observed in a series of ZnS/Zn sub(1-x)Cd sub(x)S multiple quantum-well (MQW) structures, grown on GaP substrates by MBE. We report lasing from a ZnS/Zn sub(0.97)Cd sub(0.03)S MQW at wavelengths as low as 333nm, the shortest yet reported in a semiconductor het...

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Veröffentlicht in:	Solid state communications 1996, Vol.99 (6), p.407-412
Hauptverfasser:	OZANYAN, K. B, NICHOLLS, J. E, MAY, L, HOGG, J. H. C, HAGSTON, W. E, LUNN, B, ASHENFORD, D. E
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed matter: electronic structure, electrical, magnetic, and optical properties Exact sciences and technology Iii-v semiconductors Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation Optical properties of specific thin films Physics
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Zusammenfassung:	Optically pumped stimulated emission is observed in a series of ZnS/Zn sub(1-x)Cd sub(x)S multiple quantum-well (MQW) structures, grown on GaP substrates by MBE. We report lasing from a ZnS/Zn sub(0.97)Cd sub(0.03)S MQW at wavelengths as low as 333nm, the shortest yet reported in a semiconductor heterostructure. The lasing threshold decreases for deeper wells and reaches 6.5 kW.cm super(-2) at 8K and 80 kW.cm super(-2) at 300K for the MWQs with a Cd-composition of 0.2. The results are compared to known values for similar structures grown on GaAs by MOCVD, which reveals the potential of the CaP-substrate MBE technology for the widest bandgap II-Vl heterostructures incorporating ZnS-based ternary alloys.
ISSN:	0038-1098 1879-2766
DOI:	10.1016/0038-1098(96)00265-7