Very high purity InP layer grown by liquid-phase epitaxy using erbium gettering
Very high purity InP layers have been grown by liquid phase epitaxy using rare-earth erbium as the donor-gettering source. All the Er-doped samples still exhibit n-type conduction, but its carrier concentration decreases with increasing the Er amount into the growth solution. The 300 K electron conc...
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| Veröffentlicht in: | Journal of applied physics 1993, Vol.73 (1), p.468-470 |
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| container_title | Journal of applied physics |
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| creator | Wu, Meng-Chyi Chiu, Cheng-Ming |
| description | Very high purity InP layers have been grown by liquid phase epitaxy using rare-earth erbium as the donor-gettering source. All the Er-doped samples still exhibit n-type conduction, but its carrier concentration decreases with increasing the Er amount into the growth solution. The 300 K electron concentration as low as 7×1013 cm−3 has been achieved on high-purity layers. By low-temperature photoluminescence measurement, the donor impurities of the InP samples have been obviously reduced due to the Er gettering. The free-exciton line with a linewidth of 0.9 meV dominates in the exciton spectra and the intensity ratio of free exciton to exciton-bound-to-neutral-donor lines exceeds 2.6 for the high-purity layers with n=7×1013 cm−3. |
| doi_str_mv | 10.1063/1.353875 |
| format | Article |
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All the Er-doped samples still exhibit n-type conduction, but its carrier concentration decreases with increasing the Er amount into the growth solution. The 300 K electron concentration as low as 7×1013 cm−3 has been achieved on high-purity layers. By low-temperature photoluminescence measurement, the donor impurities of the InP samples have been obviously reduced due to the Er gettering. The free-exciton line with a linewidth of 0.9 meV dominates in the exciton spectra and the intensity ratio of free exciton to exciton-bound-to-neutral-donor lines exceeds 2.6 for the high-purity layers with n=7×1013 cm−3.</description><identifier>ISSN: 0021-8979</identifier><identifier>EISSN: 1089-7550</identifier><identifier>DOI: 10.1063/1.353875</identifier><identifier>CODEN: JAPIAU</identifier><language>eng</language><publisher>Woodbury, NY: American Institute of Physics</publisher><subject>Cross-disciplinary physics: materials science; rheology ; Exact sciences and technology ; Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids) ; Materials science ; Methods of deposition of films and coatings; film growth and epitaxy ; Physics</subject><ispartof>Journal of applied physics, 1993, Vol.73 (1), p.468-470</ispartof><rights>1993 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c287t-125a2eda82e846ccf9523e94c4588adbc0bb64ba279369ca1be83dfc4262be93</citedby><cites>FETCH-LOGICAL-c287t-125a2eda82e846ccf9523e94c4588adbc0bb64ba279369ca1be83dfc4262be93</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,4010,27900,27901,27902</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=4501874$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Wu, Meng-Chyi</creatorcontrib><creatorcontrib>Chiu, Cheng-Ming</creatorcontrib><title>Very high purity InP layer grown by liquid-phase epitaxy using erbium gettering</title><title>Journal of applied physics</title><description>Very high purity InP layers have been grown by liquid phase epitaxy using rare-earth erbium as the donor-gettering source. All the Er-doped samples still exhibit n-type conduction, but its carrier concentration decreases with increasing the Er amount into the growth solution. The 300 K electron concentration as low as 7×1013 cm−3 has been achieved on high-purity layers. By low-temperature photoluminescence measurement, the donor impurities of the InP samples have been obviously reduced due to the Er gettering. The free-exciton line with a linewidth of 0.9 meV dominates in the exciton spectra and the intensity ratio of free exciton to exciton-bound-to-neutral-donor lines exceeds 2.6 for the high-purity layers with n=7×1013 cm−3.</description><subject>Cross-disciplinary physics: materials science; rheology</subject><subject>Exact sciences and technology</subject><subject>Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)</subject><subject>Materials science</subject><subject>Methods of deposition of films and coatings; film growth and epitaxy</subject><subject>Physics</subject><issn>0021-8979</issn><issn>1089-7550</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1993</creationdate><recordtype>article</recordtype><recordid>eNo9kE1LwzAch4MoOKfgR8hBxEtn3pscZfgyGMzD8FqS9N8u0rVd0qL99k4mnn7w4-E5PAjdUrKgRPFHuuCS61yeoRkl2mS5lOQczQhhNNMmN5foKqVPQijV3MzQ5gPihHeh3uF-jGGY8Kp9x42dIOI6dl8tdhNuwmEMZdbvbAIMfRjs94THFNoaQ3Rh3OMahgHi8bhGF5VtEtz87RxtX563y7dsvXldLZ_WmWc6HzLKpGVQWs1AC-V9ZSTjYIQXUmtbOk-cU8JZlhuujLfUgeZl5QVTzIHhc3R_0vaxO4yQhmIfkoemsS10YyqY4kxRJY7gwwn0sUspQlX0MextnApKit9gBS1OwY7o3Z_TJm-bKtrWh_TPC0mozgX_AVn4ao0</recordid><startdate>1993</startdate><enddate>1993</enddate><creator>Wu, Meng-Chyi</creator><creator>Chiu, Cheng-Ming</creator><general>American Institute of Physics</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7QQ</scope><scope>8FD</scope><scope>JG9</scope></search><sort><creationdate>1993</creationdate><title>Very high purity InP layer grown by liquid-phase epitaxy using erbium gettering</title><author>Wu, Meng-Chyi ; Chiu, Cheng-Ming</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c287t-125a2eda82e846ccf9523e94c4588adbc0bb64ba279369ca1be83dfc4262be93</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1993</creationdate><topic>Cross-disciplinary physics: materials science; rheology</topic><topic>Exact sciences and technology</topic><topic>Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)</topic><topic>Materials science</topic><topic>Methods of deposition of films and coatings; film growth and epitaxy</topic><topic>Physics</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Wu, Meng-Chyi</creatorcontrib><creatorcontrib>Chiu, Cheng-Ming</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Ceramic Abstracts</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><jtitle>Journal of applied physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Wu, Meng-Chyi</au><au>Chiu, Cheng-Ming</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Very high purity InP layer grown by liquid-phase epitaxy using erbium gettering</atitle><jtitle>Journal of applied physics</jtitle><date>1993</date><risdate>1993</risdate><volume>73</volume><issue>1</issue><spage>468</spage><epage>470</epage><pages>468-470</pages><issn>0021-8979</issn><eissn>1089-7550</eissn><coden>JAPIAU</coden><abstract>Very high purity InP layers have been grown by liquid phase epitaxy using rare-earth erbium as the donor-gettering source. All the Er-doped samples still exhibit n-type conduction, but its carrier concentration decreases with increasing the Er amount into the growth solution. The 300 K electron concentration as low as 7×1013 cm−3 has been achieved on high-purity layers. By low-temperature photoluminescence measurement, the donor impurities of the InP samples have been obviously reduced due to the Er gettering. The free-exciton line with a linewidth of 0.9 meV dominates in the exciton spectra and the intensity ratio of free exciton to exciton-bound-to-neutral-donor lines exceeds 2.6 for the high-purity layers with n=7×1013 cm−3.</abstract><cop>Woodbury, NY</cop><pub>American Institute of Physics</pub><doi>10.1063/1.353875</doi><tpages>3</tpages></addata></record> |
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| ispartof | Journal of applied physics, 1993, Vol.73 (1), p.468-470 |
| issn | 0021-8979 1089-7550 |
| language | eng |
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| source | AIP Digital Archive |
| subjects | Cross-disciplinary physics: materials science rheology Exact sciences and technology Liquid phase epitaxy deposition from liquid phases (melts, solutions, and surface layers on liquids) Materials science Methods of deposition of films and coatings film growth and epitaxy Physics |
| title | Very high purity InP layer grown by liquid-phase epitaxy using erbium gettering |
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