Very high purity InP layer grown by liquid-phase epitaxy using erbium gettering
Very high purity InP layers have been grown by liquid phase epitaxy using rare-earth erbium as the donor-gettering source. All the Er-doped samples still exhibit n-type conduction, but its carrier concentration decreases with increasing the Er amount into the growth solution. The 300 K electron conc...
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Veröffentlicht in: | Journal of applied physics 1993, Vol.73 (1), p.468-470 |
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Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | Very high purity InP layers have been grown by liquid phase epitaxy using rare-earth erbium as the donor-gettering source. All the Er-doped samples still exhibit n-type conduction, but its carrier concentration decreases with increasing the Er amount into the growth solution. The 300 K electron concentration as low as 7×1013 cm−3 has been achieved on high-purity layers. By low-temperature photoluminescence measurement, the donor impurities of the InP samples have been obviously reduced due to the Er gettering. The free-exciton line with a linewidth of 0.9 meV dominates in the exciton spectra and the intensity ratio of free exciton to exciton-bound-to-neutral-donor lines exceeds 2.6 for the high-purity layers with n=7×1013 cm−3. |
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ISSN: | 0021-8979 1089-7550 |
DOI: | 10.1063/1.353875 |