Void-free silicon-wafer-bond strengthening in the 200-400 degree C range

Silicon-wafer-bond strengthening in the 200-400 degree C range can be successfully applied for wafers having temperature-sensitive device structures. The bond quality and specific surface energy of the bond have been studied experimentally with respect to the surface hydrophilization state. The kinetic bond model of Stengl is applied to low-temperature bond strengthening and agreement between calculated and measured data points is established. Wafer bonding by means of static pressure is shown to be effective in the enhancement of the bond strength by overcoming most of the local waviness during room-temperature wafer bonding.