Recent advances in plasma source ion implantation at Los Alamos National Laboratory

Plasma source ion implantation (PSII) is an environmentally benign, potentially cost-effective alternative to conventional lineof-sight, accelerator-based implantation and wet-chemical plating processes. PSII offers the potential of producing a high dose of ions in a relatively simple, fast and cost-effective manner, allowing the simultaneous implantation of large surface areas (many square meters), complex shapes and multiple components. The dynamics of the transient plasma sheath present during PSII have been modeled in both 1 1/2-D and 2 1/2-D (one or two spatial dimensions, plus time), and recent results from these efforts are compared with measurements of the uniformity of the implanted ion dose in complex configurations. Ammonia gas (NH 3) has been used as a nitrogen source for PSII processing of electroplated hard chromium. A retained dose of 2.2 × 10 17 N atoms cm −2 has been demonstrated to increase the surface hardness of the electroplated Cr by 24%, and decrease the wear rate by a factor of four, without any evidence of increased hydrogen concentration in the bulk material. By adjusting the repetition rate of the applied voltage pulses, and therefore the power input to the target, controlled, elevated temperature implantations have been performed, resulting in enhanced diffusion of the implanted species with a thicker modified surface layer. Experimental work has been performed utilizing cathodic arcs as sources of metallic ions for implantation, and preliminary results of this work are given. The area of ion-beam-assisted deposition (IBAD) has been explored utilizing PSII, with large surface area diamond-like carbon (DLC) layers being generated which can exhibit hardnesses in excess of 20 GPa.