Integration of surface-micromachined polysilicon mirrors and a standard CMOS process

This paper describes the integration of surface micromachining with polysilicon and a standard CMOS process with aluminium gates. A demultiplexer circuit for addressing one micromachined mirror out of a line of eight mirrors is realized as an example. The mirrors are electrostatically deflectable with driving voltages of about 30 V. An adaptation of the applied p-well CMOS process with aluminium gates and the surface micromachining is necessary in order to enable both processes to be integrated. The technology used is described.