Structure and properties of (Ti 1− xAl x) N films prepared by reactive sputtering

(Ti 1− x Al x ) N films with several different Ti-to-Al ratios were deposited on silicon substrates by reactive cosputtering from Ti and Al targets in an ArN 2 discharge. The crystal structure of the films was found to be cubic B1 type up to 50 mol.% A1N content. With further increase in the A1 con...

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Veröffentlicht in:	Thin solid films 1993-05, Vol.228 (1), p.238-241
Hauptverfasser:	Tanaka, Yusuke, Gür, Turgut M., Kelly, Michael, Hagstrom, Stig B., Ikeda, Tsutomu
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed matter: structure, mechanical and thermal properties Exact sciences and technology Physics Solid surfaces and solid-solid interfaces Surface and interface dynamics and vibrations Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties) Thin film structure and morphology
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Zusammenfassung:	(Ti 1− x Al x ) N films with several different Ti-to-Al ratios were deposited on silicon substrates by reactive cosputtering from Ti and Al targets in an ArN 2 discharge. The crystal structure of the films was found to be cubic B1 type up to 50 mol.% A1N content. With further increase in the A1 content, the films of (Ti 0.31Al 0.69)N and (Ti 0.29Al 0.71)N were found to have mixed phases of hexagonal and cubic structures. The (Ti 1− x Al x ) N films had a well-developed cubic columnar structure with open voids which rendered lower hardness values than for stoichiometric single-crystal TiN.
ISSN:	0040-6090 1879-2731
DOI:	10.1016/0040-6090(93)90607-Q