Structural and electrical properties of Al sub(2)O sub(3) thin films on p-Si grown by low-pressure metalorganic chemical vapor deposition

Al sub(2)O sub(3) films were grown by metalorganic chemical vapor deposition on p-Si(100) orientation substrates using Al(OC sub(3)H sub(7)) sub(3) and N sub(2)O via pyrolysis. Raman spectroscopy showed the optical phonon modes of the Al sub(2)O sub(3)/Si structure. The stoichiometry of the Al sub(2)O sub(3) film was observed by Auger electron spectroscopy. Capacitance-voltage measurements clearly showed metal-insulator-semiconductor behaviors for the Al/Al sub(2)O sub(3)/Si diodes with the Al sub(2)O sub(3) insulator gate, and the interface state densities at the Al sub(2)O sub(3)/Si interface were approximately 10 super(11) eV cm super(-2) at the middle of the Si energy gap. These results indicate that Al sub(2)O sub(3) lms on Si have potential applications as insulator films.