Locking range of a hybrid mode-locked monolithic DBR semiconductor laser at millimeter-wave frequencies
We present the first investigation of the detuning characteristics at 33 GHz of a hybrid mode-locked monolithic distributed Bragg reflector semiconductor laser. Hybrid modelocking is achieved by applying a radio-frequency (RF) signal, at a frequency corresponding to the fundamental laser repetition...
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Veröffentlicht in: | IEEE microwave and guided wave letters 1996-09, Vol.6 (9), p.320-322 |
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creator | Novak, D. Kim, D.Y. Hai-Feng Liu Ahmed, Z. Ogawa, Y. |
description | We present the first investigation of the detuning characteristics at 33 GHz of a hybrid mode-locked monolithic distributed Bragg reflector semiconductor laser. Hybrid modelocking is achieved by applying a radio-frequency (RF) signal, at a frequency corresponding to the fundamental laser repetition frequency, to the saturable absorber of the passively mode-locked laser. Measurements show a 3-dB locking range greater than 40 MHz with an applied external RF signal power of 0 dBm. At this power level, the laser beat signal exhibited phase-noise less than -78 dBc/Hz and -93 dBc/Hz at 10 kHz and 5 MHz offsets, respectively. |
doi_str_mv | 10.1109/75.535832 |
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Hybrid modelocking is achieved by applying a radio-frequency (RF) signal, at a frequency corresponding to the fundamental laser repetition frequency, to the saturable absorber of the passively mode-locked laser. Measurements show a 3-dB locking range greater than 40 MHz with an applied external RF signal power of 0 dBm. At this power level, the laser beat signal exhibited phase-noise less than -78 dBc/Hz and -93 dBc/Hz at 10 kHz and 5 MHz offsets, respectively.</description><identifier>ISSN: 1051-8207</identifier><identifier>EISSN: 1558-2329</identifier><identifier>DOI: 10.1109/75.535832</identifier><identifier>CODEN: IMGLE3</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Applied sciences ; Distributed Bragg reflectors ; Electronics ; Exact sciences and technology ; Frequency ; Laser mode locking ; Optoelectronic devices ; Phase control ; Phase detection ; Power lasers ; Power measurement ; RF signals ; Semiconductor electronics. Microelectronics. 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Hybrid modelocking is achieved by applying a radio-frequency (RF) signal, at a frequency corresponding to the fundamental laser repetition frequency, to the saturable absorber of the passively mode-locked laser. Measurements show a 3-dB locking range greater than 40 MHz with an applied external RF signal power of 0 dBm. At this power level, the laser beat signal exhibited phase-noise less than -78 dBc/Hz and -93 dBc/Hz at 10 kHz and 5 MHz offsets, respectively.</description><subject>Applied sciences</subject><subject>Distributed Bragg reflectors</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Frequency</subject><subject>Laser mode locking</subject><subject>Optoelectronic devices</subject><subject>Phase control</subject><subject>Phase detection</subject><subject>Power lasers</subject><subject>Power measurement</subject><subject>RF signals</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>Semiconductor lasers</subject><subject>Signal detection</subject><issn>1051-8207</issn><issn>1558-2329</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1996</creationdate><recordtype>article</recordtype><recordid>eNqNkM1LAzEUxBdRsFYPXj3lIIKHrfnYbDZHrZ9QEETPS5q8tNHspiZbpf-9W7b07OkNzG_mwWTZOcETQrC8EXzCGa8YPchGhPMqp4zKw15jTvKKYnGcnaT0iTEpOMOjbDEL-su1CxRVuwAULFJouZlHZ1ATDOS-t2Gr2-Bdt3Qa3d-9oQSN06E1a92FiLxKEJHqUOO8dw10EPNf9QPIRvheQ6sdpNPsyCqf4Gx3x9nH48P79DmfvT69TG9nuWZMdHmJJTeKclFSzIgRFcFCMMW4xXNWGoOllaW21lIqiC5KAUYaJUgJRaEqXbBxdjX0rmLof6eublzS4L1qIaxTTUtaSMnIP0BSYcGqHrweQB1DShFsvYquUXFTE1xvN68Fr4fNe_ZyV6qSVt72o2qX9gFGCWFC9tjFgDkA2Lu7jj87fois</recordid><startdate>19960901</startdate><enddate>19960901</enddate><creator>Novak, D.</creator><creator>Kim, D.Y.</creator><creator>Hai-Feng Liu</creator><creator>Ahmed, Z.</creator><creator>Ogawa, Y.</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope><scope>7U5</scope></search><sort><creationdate>19960901</creationdate><title>Locking range of a hybrid mode-locked monolithic DBR semiconductor laser at millimeter-wave frequencies</title><author>Novak, D. ; Kim, D.Y. ; Hai-Feng Liu ; Ahmed, Z. ; Ogawa, Y.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c337t-6095da25762031d7810773a35f0b36dd09f96cfff2271c467ed9da716e44a8c43</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1996</creationdate><topic>Applied sciences</topic><topic>Distributed Bragg reflectors</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>Frequency</topic><topic>Laser mode locking</topic><topic>Optoelectronic devices</topic><topic>Phase control</topic><topic>Phase detection</topic><topic>Power lasers</topic><topic>Power measurement</topic><topic>RF signals</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><topic>Semiconductor lasers</topic><topic>Signal detection</topic><toplevel>online_resources</toplevel><creatorcontrib>Novak, D.</creatorcontrib><creatorcontrib>Kim, D.Y.</creatorcontrib><creatorcontrib>Hai-Feng Liu</creatorcontrib><creatorcontrib>Ahmed, Z.</creatorcontrib><creatorcontrib>Ogawa, Y.</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Solid State and Superconductivity Abstracts</collection><jtitle>IEEE microwave and guided wave letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Novak, D.</au><au>Kim, D.Y.</au><au>Hai-Feng Liu</au><au>Ahmed, Z.</au><au>Ogawa, Y.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Locking range of a hybrid mode-locked monolithic DBR semiconductor laser at millimeter-wave frequencies</atitle><jtitle>IEEE microwave and guided wave letters</jtitle><stitle>MGWL</stitle><date>1996-09-01</date><risdate>1996</risdate><volume>6</volume><issue>9</issue><spage>320</spage><epage>322</epage><pages>320-322</pages><issn>1051-8207</issn><eissn>1558-2329</eissn><coden>IMGLE3</coden><abstract>We present the first investigation of the detuning characteristics at 33 GHz of a hybrid mode-locked monolithic distributed Bragg reflector semiconductor laser. Hybrid modelocking is achieved by applying a radio-frequency (RF) signal, at a frequency corresponding to the fundamental laser repetition frequency, to the saturable absorber of the passively mode-locked laser. Measurements show a 3-dB locking range greater than 40 MHz with an applied external RF signal power of 0 dBm. At this power level, the laser beat signal exhibited phase-noise less than -78 dBc/Hz and -93 dBc/Hz at 10 kHz and 5 MHz offsets, respectively.</abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/75.535832</doi><tpages>3</tpages></addata></record> |
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ispartof | IEEE microwave and guided wave letters, 1996-09, Vol.6 (9), p.320-322 |
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subjects | Applied sciences Distributed Bragg reflectors Electronics Exact sciences and technology Frequency Laser mode locking Optoelectronic devices Phase control Phase detection Power lasers Power measurement RF signals Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Semiconductor lasers Signal detection |
title | Locking range of a hybrid mode-locked monolithic DBR semiconductor laser at millimeter-wave frequencies |
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