Locking range of a hybrid mode-locked monolithic DBR semiconductor laser at millimeter-wave frequencies

We present the first investigation of the detuning characteristics at 33 GHz of a hybrid mode-locked monolithic distributed Bragg reflector semiconductor laser. Hybrid modelocking is achieved by applying a radio-frequency (RF) signal, at a frequency corresponding to the fundamental laser repetition...

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Veröffentlicht in:	IEEE microwave and guided wave letters 1996-09, Vol.6 (9), p.320-322
Hauptverfasser:	Novak, D., Kim, D.Y., Hai-Feng Liu, Ahmed, Z., Ogawa, Y.
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Distributed Bragg reflectors Electronics Exact sciences and technology Frequency Laser mode locking Optoelectronic devices Phase control Phase detection Power lasers Power measurement RF signals Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Semiconductor lasers Signal detection
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Beschreibung
Zusammenfassung:	We present the first investigation of the detuning characteristics at 33 GHz of a hybrid mode-locked monolithic distributed Bragg reflector semiconductor laser. Hybrid modelocking is achieved by applying a radio-frequency (RF) signal, at a frequency corresponding to the fundamental laser repetition frequency, to the saturable absorber of the passively mode-locked laser. Measurements show a 3-dB locking range greater than 40 MHz with an applied external RF signal power of 0 dBm. At this power level, the laser beat signal exhibited phase-noise less than -78 dBc/Hz and -93 dBc/Hz at 10 kHz and 5 MHz offsets, respectively.
ISSN:	1051-8207 1558-2329
DOI:	10.1109/75.535832