Spectroscopic ellipsometry: a useful tool to determine the refractive indices and interfaces of In sub(0.52)Al sub(0.48)As and In sub(0.53)Al sub(x)Ga sub(0.47-x) As layers on InP in the wavelengths range 280-1900 nm
In sub(0.52)Al sub(0.48)As and In sub(0.53)Al sub(0.47-x)As layers on InP are promising quaternary materials for optoelectronic devices: lasers containing these materials have been realized and show excellent performance. The refractive indices of both In sub(0.52) Al sub(0.458)Ga sub(0.022)As and I...
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Veröffentlicht in: | Materials science & engineering. B, Solid-state materials for advanced technology Solid-state materials for advanced technology, 1993-01, Vol.B21 (2-3), p.174-176 |
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Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | In sub(0.52)Al sub(0.48)As and In sub(0.53)Al sub(0.47-x)As layers on InP are promising quaternary materials for optoelectronic devices: lasers containing these materials have been realized and show excellent performance. The refractive indices of both In sub(0.52) Al sub(0.458)Ga sub(0.022)As and In sub(0.53)Al sub(0.055)Ga sub(0.415)As are measured for the first time with multiple angle spectroscopic ellipsometry in the wavelength range 280-1900 nm. |
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ISSN: | 0921-5107 |