Photovoltaic spectra of HgCdTe diodes fabricated by ion beam milling

Photovoltaic spectra of HgCdTe diodes fabricated by ion beam milling

A simple non-destructive method for investigating ion-beam-milled samples is based on measurement of their optical absorption and photovoltaic responsivity. By comparing the two spectra, the p-n junction depth (i.e. the efficiency of ion beam milling) can be estimated.

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Veröffentlicht in:Semiconductor science and technology 1993-12, Vol.8 (12), p.2069-2071
Hauptverfasser: Hlidek, P, Belas, E, Franc, J, Koubele, V
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Sprache:eng
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Applied sciences
Electronics
Exact sciences and technology
Optoelectronic devices
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
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container_end_page 2071
container_issue 12
container_start_page 2069
container_title Semiconductor science and technology
container_volume 8
creator Hlidek, P
Belas, E
Franc, J
Koubele, V
description A simple non-destructive method for investigating ion-beam-milled samples is based on measurement of their optical absorption and photovoltaic responsivity. By comparing the two spectra, the p-n junction depth (i.e. the efficiency of ion beam milling) can be estimated.
doi_str_mv 10.1088/0268-1242/8/12/006
format Article
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source IOP Publishing Journals; Institute of Physics (IOP) Journals - HEAL-Link
subjects Applied sciences
Electronics
Exact sciences and technology
Optoelectronic devices
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
title Photovoltaic spectra of HgCdTe diodes fabricated by ion beam milling
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