Photovoltaic spectra of HgCdTe diodes fabricated by ion beam milling

A simple non-destructive method for investigating ion-beam-milled samples is based on measurement of their optical absorption and photovoltaic responsivity. By comparing the two spectra, the p-n junction depth (i.e. the efficiency of ion beam milling) can be estimated.

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Bibliographische Detailangaben
Veröffentlicht in:	Semiconductor science and technology 1993-12, Vol.8 (12), p.2069-2071
Hauptverfasser:	Hlidek, P, Belas, E, Franc, J, Koubele, V
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Electronics Exact sciences and technology Optoelectronic devices Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Online-Zugang:	Volltext
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Beschreibung
Zusammenfassung:	A simple non-destructive method for investigating ion-beam-milled samples is based on measurement of their optical absorption and photovoltaic responsivity. By comparing the two spectra, the p-n junction depth (i.e. the efficiency of ion beam milling) can be estimated.
ISSN:	0268-1242 1361-6641
DOI:	10.1088/0268-1242/8/12/006