Solubility-limit activation of Si doping at MBE GaAs pn junctions observed by cross-sectional scanning tunneling microscopy

Reports over the years have indicated that silicon can exceed its bulk doping limits in depletion layers and in non-homogeneous profiles. We have confirmed this high donor activity under the non-bulk conditions within the depletion layers of pn-junctions. The solubility-limit activation of Si doping...

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Veröffentlicht in:	Journal of crystal growth 1993-01, Vol.127 (1), p.1030-1031
Hauptverfasser:	Kirchner, Peter D., Vaterlaus, Andreas, Feenstra, Randall M., Lin, Chi-lieh, Pettit, G.David, Woodall, Jerry M.
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed matter: structure, mechanical and thermal properties Exact sciences and technology Low-dimensional structures (superlattices, quantum well structures, multilayers): structure, and nonelectronic properties Physics Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties)
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Zusammenfassung:	Reports over the years have indicated that silicon can exceed its bulk doping limits in depletion layers and in non-homogeneous profiles. We have confirmed this high donor activity under the non-bulk conditions within the depletion layers of pn-junctions. The solubility-limit activation of Si doping at MBE GaAs pn junctions has been observed by cross-sectional scanning tunneling microscopy.
ISSN:	0022-0248 1873-5002
DOI:	10.1016/0022-0248(93)90783-S