Temperature-Dependent Bending Rigidity of AB-Stacked Bilayer Graphene

The change in bending rigidity with temperature κ(T) for 2D materials is highly debated: theoretical works predict both increase and decrease. Here we present measurements of κ(T), for a 2D material: AB-stacked bilayer graphene. We obtain κ(T) from phonon dispersion curves measured with helium atom...

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Veröffentlicht in:Physical review letters 2021-12, Vol.127 (26), p.266102-266102
Hauptverfasser: Eder, S D, Hellner, S K, Forti, S, Nordbotten, J M, Manson, J R, Coletti, C, Holst, B
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container_end_page 266102
container_issue 26
container_start_page 266102
container_title Physical review letters
container_volume 127
creator Eder, S D
Hellner, S K
Forti, S
Nordbotten, J M
Manson, J R
Coletti, C
Holst, B
description The change in bending rigidity with temperature κ(T) for 2D materials is highly debated: theoretical works predict both increase and decrease. Here we present measurements of κ(T), for a 2D material: AB-stacked bilayer graphene. We obtain κ(T) from phonon dispersion curves measured with helium atom scattering in the temperature range 320-400 K. We find that the bending rigidity increases with temperature. Assuming a linear dependence over the measured temperature region we obtain κ(T)=[(1.3±0.1)+(0.006±0.001)T/K]  eV by fitting the data. We discuss this result in the context of existing predictions and room temperature measurements.
doi_str_mv 10.1103/PhysRevLett.127.266102
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title Temperature-Dependent Bending Rigidity of AB-Stacked Bilayer Graphene
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