Rapid thermal and large area processing of Si and FeSi sub(2) films with a line electron beam

The radiation of a line electron beam has been used for the rapid zone heating of thin films deposited on a suitable substrate. This zone heating process shows the ability (i) for rapid and large area zone-melting crystallization of silicon films deposited on graphite substrate leading to a preferential (111) orientation of the crystallized silicon film and (ii) for the thermal induced hetero-epitaxial grain growth of 1 mu m thick beta -FeSi sub(2) films from the amorphous phase on (111) silicon substrates by a solid state reaction. Both processes show new perspectives of fabricating thin films for photovoltaic use.