Epitaxial beta -FeSi sub(2) formed by Fe deposition on hot Si(001)

Epitaxial beta -FeSi sub(2) has been formed by depositing iron (Fe), at a rate of 0.01 nm/s, onto hot Si(001) substrates at 630 degree C. Epitaxial films were formed as long as the disilicide thickness was less than 320 nm. Post-annealing at around 800 degree C improved the epitaxial quality of the...

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Veröffentlicht in:	Applied surface science 1993-01, Vol.73, p.131-134
Hauptverfasser:	Reader, A H, Duchateau, JPWB, Timmers, J, Hakkens, F J G
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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Zusammenfassung:	Epitaxial beta -FeSi sub(2) has been formed by depositing iron (Fe), at a rate of 0.01 nm/s, onto hot Si(001) substrates at 630 degree C. Epitaxial films were formed as long as the disilicide thickness was less than 320 nm. Post-annealing at around 800 degree C improved the epitaxial quality of the films.
ISSN:	0169-4332