Highly effective implantation method in the energy range 0.5-10 keV

This paper presents a way of increasing implantation effectiveness by means of atomic implantation. The intensity of atomic beam does not have the space charge limitation. The reduction in energy to the range 0.5-10 keV can lead to a considerable increase (up to 10-100 times) of the intensity of the...

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Veröffentlicht in:	Surface & coatings technology 1996-05, Vol.96 (1), p.75-80
Hauptverfasser:	Churkin, I N, Volosov, V I
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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