Highly effective implantation method in the energy range 0.5-10 keV

This paper presents a way of increasing implantation effectiveness by means of atomic implantation. The intensity of atomic beam does not have the space charge limitation. The reduction in energy to the range 0.5-10 keV can lead to a considerable increase (up to 10-100 times) of the intensity of the atomic beam while keeping the power of the implanted beam the same. One source of atomic flow is fast heavy atoms (source with crossed fields; ISP). The physical principles of the source determine the advantages of this source in comparison with traditional ion implanters. Fast heavy atoms are produced by sputtering of the cathode material in the source, ionizing it in the volume of the plasma of the source, accelerating it to the intermediate energy range, and then converting it to a fast atom via charge-exchange in the source. The experimental results obtained for the irradiation of titanium and niobium targets by carbon atom flows ( < W > approx =2.5 keV, j approx =50 mA cm exp -2 ) show the possibility of highly effective implantation by atomic flows at intermediate energies.