A new drain engineering structure-SCD-LDD (surface counter doped LDD) for improved hot carrier reliability

A new drain engineering structure-SCD-LDD (surface counter doped LDD) for improved hot carrier reliability

A new SCD-LDD (Surface Counter Doped LDD) structure is proposed. This structure introduces an additional oblique BF 2 implant after nLDD implant, which counter-dopes the nLDD surface concentration near the gate edge. As a result, the lateral electric fields beneath the gate were reduced and the satu...

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Veröffentlicht in:Japanese Journal of Applied Physics 1993-09, Vol.32 (9A), p.L1203-L1205
Hauptverfasser: JIH WEN CHOU, CHUN YUN CHANG, LIEN TSE HO, JOE KO, HSUE, P
Format: Artikel
Sprache:eng
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Applied sciences
Electronics
Exact sciences and technology
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Transistors
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container_end_page L1205
container_issue 9A
container_start_page L1203
container_title Japanese Journal of Applied Physics
container_volume 32
creator JIH WEN CHOU
CHUN YUN CHANG
LIEN TSE HO
JOE KO
HSUE, P
description A new SCD-LDD (Surface Counter Doped LDD) structure is proposed. This structure introduces an additional oblique BF 2 implant after nLDD implant, which counter-dopes the nLDD surface concentration near the gate edge. As a result, the lateral electric fields beneath the gate were reduced and the saturation drain current was conducted downward away from the maximum electric fields, resulting in a substantial enhancement of hot carrier reliability due to suppression of hot carrier generation and injection with this structure.
doi_str_mv 10.1143/jjap.32.l1203
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source IOP Publishing Journals; Institute of Physics (IOP) Journals - HEAL-Link
subjects Applied sciences
Electronics
Exact sciences and technology
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Transistors
title A new drain engineering structure-SCD-LDD (surface counter doped LDD) for improved hot carrier reliability
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