A new drain engineering structure-SCD-LDD (surface counter doped LDD) for improved hot carrier reliability

A new SCD-LDD (Surface Counter Doped LDD) structure is proposed. This structure introduces an additional oblique BF 2 implant after nLDD implant, which counter-dopes the nLDD surface concentration near the gate edge. As a result, the lateral electric fields beneath the gate were reduced and the satu...

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Veröffentlicht in:	Japanese Journal of Applied Physics 1993-09, Vol.32 (9A), p.L1203-L1205
Hauptverfasser:	JIH WEN CHOU, CHUN YUN CHANG, LIEN TSE HO, JOE KO, HSUE, P
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Electronics Exact sciences and technology Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Transistors
Online-Zugang:	Volltext
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Beschreibung
Zusammenfassung:	A new SCD-LDD (Surface Counter Doped LDD) structure is proposed. This structure introduces an additional oblique BF 2 implant after nLDD implant, which counter-dopes the nLDD surface concentration near the gate edge. As a result, the lateral electric fields beneath the gate were reduced and the saturation drain current was conducted downward away from the maximum electric fields, resulting in a substantial enhancement of hot carrier reliability due to suppression of hot carrier generation and injection with this structure.
ISSN:	0021-4922 1347-4065
DOI:	10.1143/jjap.32.l1203