Investigation of rapid-thermal-oxidized porous silicon

We report that the photoluminescence of porous Si that was quenched by low-temperature thermal annealing was restored by further annealing in an oxygen atmosphere at high temperature (750 °C≤T≤1100 °C). The intensity of the photoluminescence recovered to near the as-anodized value and the peak wavel...

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Veröffentlicht in:Applied physics letters 1993-06, Vol.62 (26), p.3501-3503
Hauptverfasser: LI, K.-H, TSAI, C, CAMPBELL, J. C, HANCE, B. K, WHITE, J. M
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Sprache:eng
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Zusammenfassung:We report that the photoluminescence of porous Si that was quenched by low-temperature thermal annealing was restored by further annealing in an oxygen atmosphere at high temperature (750 °C≤T≤1100 °C). The intensity of the photoluminescence recovered to near the as-anodized value and the peak wavelength was red shifted by approximately 100 nm. The oxidized porous Si has been found to have lower resistance and higher photoelectric efficiency than as-anodized material.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.109008