Investigation of rapid-thermal-oxidized porous silicon
We report that the photoluminescence of porous Si that was quenched by low-temperature thermal annealing was restored by further annealing in an oxygen atmosphere at high temperature (750 °C≤T≤1100 °C). The intensity of the photoluminescence recovered to near the as-anodized value and the peak wavel...
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Veröffentlicht in: | Applied physics letters 1993-06, Vol.62 (26), p.3501-3503 |
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Hauptverfasser: | , , , , |
Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | We report that the photoluminescence of porous Si that was quenched by low-temperature thermal annealing was restored by further annealing in an oxygen atmosphere at high temperature (750 °C≤T≤1100 °C). The intensity of the photoluminescence recovered to near the as-anodized value and the peak wavelength was red shifted by approximately 100 nm. The oxidized porous Si has been found to have lower resistance and higher photoelectric efficiency than as-anodized material. |
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ISSN: | 0003-6951 1077-3118 |
DOI: | 10.1063/1.109008 |