Effect of irradiation in SEM on electrical properties of silicon

Effect of irradiation in SEM on electrical properties of silicon

The defect formation in gold doped n-Si under the irradiation by electrons with the subthreshold energy or light illumination have been studied by the deep level transient spectroscopy (DLTS) technique. The formation of three at least new electrically active defects was observed. It has been shown t...

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Veröffentlicht in:Materials science & engineering. B, Solid-state materials for advanced technology Solid-state materials for advanced technology, 1996-12, Vol.42 (1-3), p.276-278
Hauptverfasser: Feklisova, O V, Yakimov, E B, Yarykin, N A
Format: Artikel
Sprache:eng
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Zusammenfassung:The defect formation in gold doped n-Si under the irradiation by electrons with the subthreshold energy or light illumination have been studied by the deep level transient spectroscopy (DLTS) technique. The formation of three at least new electrically active defects was observed. It has been shown that E sub c -0.20 energy level is associated with hydrogen-gold complex. Both the treatments used were found to stimulate hydrogen transport in silicon. Copyright (c) 1996 Elsevier Science S.A. All rights reserved.
ISSN:0921-5107