Effect of native point defects on morphology of gettering centres in CZ-silicon wafers

Effect of native point defects on morphology of gettering centres in CZ-silicon wafers

The influence of native point defect concentration on oxygen precipitation processes in SiOi system has been investigated. The supersaturation degree of native point defects in the bulk of the silicon wafers was varied by changing the conditions of the preliminary oxidation. It has been shown supers...

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Veröffentlicht in:Materials science & engineering. B, Solid-state materials for advanced technology Solid-state materials for advanced technology, 1996-01, Vol.36 (1-3), p.120-124
Hauptverfasser: Enisherlova, K.L., Rusak, T.F., Mil'vidskii, M.G., Reznick, V.J.
Format: Artikel
Sprache:eng
Schlagworte:
Gettering
Silicon
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Zusammenfassung:The influence of native point defect concentration on oxygen precipitation processes in SiOi system has been investigated. The supersaturation degree of native point defects in the bulk of the silicon wafers was varied by changing the conditions of the preliminary oxidation. It has been shown supersaturation of a certain type of native point defect can retard the oxygen precipitation process and change the picture of defect formation.
ISSN:0921-5107
1873-4944
DOI:10.1016/0921-5107(95)01427-6