On-site phosphine purification for gas-source MBE of InGaAlP

On-site phosphine purification for gas-source MBE of InGaAlP

A gas filter consisting of 150 cm 3 of 3A molecular sieve has been used to purify phosphine immediately prior to use in gas-source molecular beam epitaxy. Use of the purified phosphine has been found to reduce the measured electron trap density in n-InGaP and substantially increase the carrier conce...

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Veröffentlicht in:Journal of crystal growth 1993-02, Vol.127 (1), p.995-998
Hauptverfasser: Hafich, M.J., Woods, L.M., Kim, H.S., Patrizi, G.A., Robinson, G.Y.
Format: Artikel
Sprache:eng
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Zusammenfassung:A gas filter consisting of 150 cm 3 of 3A molecular sieve has been used to purify phosphine immediately prior to use in gas-source molecular beam epitaxy. Use of the purified phosphine has been found to reduce the measured electron trap density in n-InGaP and substantially increase the carrier concentration at a given impurity concentration in n-InGaAlP due to a reduction of oxygen incorporation.
ISSN:0022-0248
1873-5002
DOI:10.1016/0022-0248(93)90775-R