In-plane texturing control of Y-Ba-Cu-O thin films on polycrystalline substrates by ion-beam-modified intermediate buffer layers

Biaxially aligned YBCO thin films were successfully formed on polycrystalline Ni-based alloy by using ion-beam-modified yttria-stabilized-zirconia (YSZ) intermediate layers. YSZ layers were deposited by ion-beam-assisted deposition (IBAD) with concurrent off-axis ion beam bombardment. The YSZ

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Bibliographische Detailangaben
Veröffentlicht in:	IEEE transactions on applied superconductivity 1993-03, Vol.3 (1), p.1510-1515
Hauptverfasser:	Iijima, Y., Onabe, K., Futaki, N., Tanabe, N., Sadakata, N., Kohno, O., Ikeno, Y.
Format:	Artikel
Sprache:	eng
Schlagworte:	Buffer layers Condensed matter: electronic structure, electrical, magnetic, and optical properties Cross-disciplinary physics: materials science rheology Crystallization Exact sciences and technology High-tc films Ion beams Magnetic films Materials science Methods of deposition of films and coatings film growth and epitaxy Physics Pulsed laser deposition Sputtering Substrates Superconducting films and low-dimensional structures Superconductivity Thin film devices Transistors Yttrium barium copper oxide
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Beschreibung
Zusammenfassung:	Biaxially aligned YBCO thin films were successfully formed on polycrystalline Ni-based alloy by using ion-beam-modified yttria-stabilized-zirconia (YSZ) intermediate layers. YSZ layers were deposited by ion-beam-assisted deposition (IBAD) with concurrent off-axis ion beam bombardment. The YSZ
ISSN:	1051-8223 1558-2515
DOI:	10.1109/77.233380