Dielectric breakdown II: Related projects at the University of twente
In this paper an overview is given of the related activities in our group of the University of Twente. These are on thin film transistors with the inherent difficulty of making a gate dielectric at low temperature, on thin dielectrics for EEPROM devices with well-known requirements with respect to c...
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Veröffentlicht in: | Microelectronics 1996-10, Vol.27 (7), p.623-632 |
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Hauptverfasser: | , , , |
Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | In this paper an overview is given of the related activities in our group of the University of Twente. These are on thin film transistors with the inherent difficulty of making a gate dielectric at low temperature, on thin dielectrics for EEPROM devices with well-known requirements with respect to charge retention and endurance and, finally, on thin film diodes in displays with unexpected breakdown properties. |
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ISSN: | 1879-2391 0026-2692 1879-2391 |
DOI: | 10.1016/0026-2692(95)00105-0 |